{"title":"基于130纳米BiCMOS技术的220 GHz OOK同相发射机","authors":"Kefei Wu, B. Fahs, M. Hella","doi":"10.1109/BCICTS.2018.8550896","DOIUrl":null,"url":null,"abstract":"This paper presents a novel 220 GHz transmitter based on on-off keying (OOK) modulation in 130 nm SiGe BiCMOS process. An outphasing architecture is explored for the first time beyond 200 GHz to enable the use of nonlinear power amplifier-multiplier chains (AMC) while supporting nonconstant envelope modulation schemes. The transmitter consists of a high speed outphasing modulator and two identical power amplifier frequency doubler chains. The modulator modulates the phase difference of two parallel signal paths between 0° and 90° through a double-pole double-throw (DPDT) switch and two fixed-value phase shifters. A −2 dBm continuous wave output power is measured at 220 GHz with a 3-dB bandwidth of 20 GHz. A data rate of 8 Gb/s is reported at a total DC power consumption of 380 mW.","PeriodicalId":272808,"journal":{"name":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology\",\"authors\":\"Kefei Wu, B. Fahs, M. Hella\",\"doi\":\"10.1109/BCICTS.2018.8550896\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a novel 220 GHz transmitter based on on-off keying (OOK) modulation in 130 nm SiGe BiCMOS process. An outphasing architecture is explored for the first time beyond 200 GHz to enable the use of nonlinear power amplifier-multiplier chains (AMC) while supporting nonconstant envelope modulation schemes. The transmitter consists of a high speed outphasing modulator and two identical power amplifier frequency doubler chains. The modulator modulates the phase difference of two parallel signal paths between 0° and 90° through a double-pole double-throw (DPDT) switch and two fixed-value phase shifters. A −2 dBm continuous wave output power is measured at 220 GHz with a 3-dB bandwidth of 20 GHz. A data rate of 8 Gb/s is reported at a total DC power consumption of 380 mW.\",\"PeriodicalId\":272808,\"journal\":{\"name\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS.2018.8550896\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS.2018.8550896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 220 GHz OOK Outphasing Transmitter in 130-nm BiCMOS Technology
This paper presents a novel 220 GHz transmitter based on on-off keying (OOK) modulation in 130 nm SiGe BiCMOS process. An outphasing architecture is explored for the first time beyond 200 GHz to enable the use of nonlinear power amplifier-multiplier chains (AMC) while supporting nonconstant envelope modulation schemes. The transmitter consists of a high speed outphasing modulator and two identical power amplifier frequency doubler chains. The modulator modulates the phase difference of two parallel signal paths between 0° and 90° through a double-pole double-throw (DPDT) switch and two fixed-value phase shifters. A −2 dBm continuous wave output power is measured at 220 GHz with a 3-dB bandwidth of 20 GHz. A data rate of 8 Gb/s is reported at a total DC power consumption of 380 mW.
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