模拟应用的单晕深亚微米p- mosfet的性能和可靠性

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-11-07 DOI:10.1109/IPFA.2002.1025608

N. K. Jha, M.S. Baghini, V. Rao

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引用次数: 9

摘要

首次研究了典型模拟工作条件下通道热载流子应力对单晕p-MOSFET器件的影响。与传统的mosfet相比，在相同的工作条件下，SH器件表现出较少的退化。介绍了SH植入物参数对器件退化的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applications

The effect of channel hot carrier (CHC) stress under typical analog operating conditions is studied for the first time for single halo (SH) p-MOSFET devices. The SH devices show less degradation under identical operating conditions compared to conventional MOSFETs. The effect of SH implant parameters on device degradation is presented.

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Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

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