基于仿真模型和几何规划的纳米级低差稳压器自动合成工具

S. Hsu, Wei-Zen Chen, Jui-Pin Zheng, Sean Shih-Ying Liu, Po-Cheng Pan, Hung-Ming Chen
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引用次数: 0

摘要

本文提出了一种高效的低差稳压器(LDOs)自动设计的综合框架,以方便各种电源管理集成电路的应用。提出了一种自动处理拓扑选择、晶体管尺寸和布局生成的四级合成器。该方法正确地描述了器件在中强反转区的行为,便于电流优化。无需繁琐的试验和错误程序,即可提供“SPICE精度”器件尺寸映射,并且最终布局紧凑且规则,同时满足模拟设计约束。利用所提出的LDO自动设计合成工具,在65nm CMOS工艺下成功制作了原型芯片。实验结果验证了我们的方法在工业案例中的高性能,并满足所有目标规格。
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An automatic synthesis tool for nanometer low dropout regulator using simulation based model and geometric programming
This paper presents an efficient synthesis framework for Low Dropout Regulator (LDOs) automatic design to facilitate varieties of power management ICs applications. A four-stage synthesizer is proposed to deal with topology selection, transistor sizing, and layout generation automatically. The proposed approach correctly describes device behaviors in moderate and strong inversion regions for current optimization. Without trivial trial and error procedure, the “SPICE accuracy” device size mapping is provided, and the resulting layout is compact and regular while meeting analog design constraints. Using the proposed synthesis tool for LDO automatic design, a prototype chip has been successfully fabricated in 65nm CMOS process. The experimental results validate our methodology in industrial cases with high performance and meet all the target specifications.
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