{"title":"低COO PVD解决方案解决2.5D和3D TSV封装挑战","authors":"H. Auer, H. Hirscher, P. Desjardins, J. Weichart","doi":"10.1109/IEMT.2012.6521799","DOIUrl":null,"url":null,"abstract":"As with any emerging technology, 2.5D and 3D IC TSV packaging integration brings new challenges. Amongst others, we will review thin wafer handling, organic passivation outgassing control, glue layers critical thermal management and TSV high aspect ratio barrier and seed layers deposition. We will then demonstrate how Oerlikon's PVD technology has managed to address each of these issues with manufacturing low COO solutions.","PeriodicalId":315408,"journal":{"name":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low COO PVD solutions addressing 2.5D and 3D TSV packaging challenges\",\"authors\":\"H. Auer, H. Hirscher, P. Desjardins, J. Weichart\",\"doi\":\"10.1109/IEMT.2012.6521799\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As with any emerging technology, 2.5D and 3D IC TSV packaging integration brings new challenges. Amongst others, we will review thin wafer handling, organic passivation outgassing control, glue layers critical thermal management and TSV high aspect ratio barrier and seed layers deposition. We will then demonstrate how Oerlikon's PVD technology has managed to address each of these issues with manufacturing low COO solutions.\",\"PeriodicalId\":315408,\"journal\":{\"name\":\"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)\",\"volume\":\"73 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEMT.2012.6521799\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 35th IEEE/CPMT International Electronics Manufacturing Technology Conference (IEMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEMT.2012.6521799","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
摘要
与任何新兴技术一样，2.5D和3D IC TSV封装集成带来了新的挑战。其中，我们将回顾薄晶圆处理，有机钝化除气控制，胶层临界热管理和TSV高宽高比屏障和种子层沉积。然后，我们将展示欧瑞康的PVD技术如何通过制造低COO解决方案来解决这些问题。
Low COO PVD solutions addressing 2.5D and 3D TSV packaging challenges
As with any emerging technology, 2.5D and 3D IC TSV packaging integration brings new challenges. Amongst others, we will review thin wafer handling, organic passivation outgassing control, glue layers critical thermal management and TSV high aspect ratio barrier and seed layers deposition. We will then demonstrate how Oerlikon's PVD technology has managed to address each of these issues with manufacturing low COO solutions.
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