Low temperature activated Ga and Sb ion-implanted shallow junctions

Low-resistive n+/p and p+/n junctions were investigated using antimony and gallium conventional ion-implantation and low temperature rapid thermal annealing to be implemented in high-rmetal-electrode gate stack MOSFETs. Both dopant species completely regrew through solid phasevepitaxial regrowth (SPER) with low thermal budget and acceptable annealing time (at 600°C for 1 min). SPER resulted in highly activated junctions and acceptable leakage current without significant change in junction depth compared to as-implanted profile. The results indicated that Sb and Ga are proper candidates for shallow and low resistive source and drain extensions fabricated at low temperature for high-rMOSFET processing era.