12w /mm的嵌入式栅极AlGaN/GaN异质结场板场效应管

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269345

Y. Ando, Y. Okamoto, K. Hataya, T. Nakayama, H. Miyamoto, T. Inoue, M. Kuzuhara

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引用次数: 28

摘要

为了改善AlGaN/GaN场极板场效应管的跨导特性和增益特性，引入了一种凹栅结构。通过引入浇口凹槽，将最大gm从130 mS/mm提高到200 mS/mm。与平面fp - fet相比，凹槽fp - fet的线性增益提高了3- 7db。在66 V漏极电压下，1 mm宽的嵌入式FP-FET的输出功率为12.0 W，线性增益为21.2 dB, 2ghz时的功率增加效率为48.8%。据我们所知，12.0 W/mm的功率密度是有史以来氮化镓基fet的最高功率密度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET

A recessed-gate structure was introduced to improve transconductance (gm) and gain characteristics in AlGaN/GaN field-plate (FP) FETs. A maximum gm was improved from 130 to 200 mS/mm by introducing gate recess. Recessed FP-FETs exhibited 3-7 dB higher linear gain as compared with planar FP-FETs. A 1 mm-wide recessed FP-FET biased at a drain voltage of 66 V demonstrated 12.0 W output power, 21.2 dB linear gain, and 48.8 % power added efficiency at 2 GHz. To our knowledge, the power density of 12.0 W/mm is the highest ever achieved for GaN-based FETs.

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IEEE International Electron Devices Meeting 2003

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