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引用次数: 0

摘要

提出了一种以Al/sub 0.2/Ga/sub 0.8/As- gaas -Al/sub 0.2/Ga/sub 0.8/As- gaas -Al/sub 0.2/Ga/sub 0.8/As单量子阱结构上的连续态作为四能级激光系统最高能级的光抽运远红外(FIR)子带间激光发生器。这种简单的结构被设计用来利用电子与基于砷化镓的二维半导体系统(2DSSs)中的纵向光学(LO)声子相互作用引起的电声子共振(EPR)效应,实现第二和第三电子子带之间的居群反转。该设计允许更大的灵活性选择泵浦源,并大大简化了设备制造。通过求解耦合薛定谔方程和泊松方程,通过自洽计算得到了FIR子带间激光器件的电子子带结构。
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Far-infrared laser generation from an optically pumped single quantum well structure
An optically pumped far-infrared (FIR) intersubband laser generator is proposed in which the continuum states above an Al/sub 0.2/Ga/sub 0.8/As-GaAs-Al/sub 0.2/Ga/sub 0.8/As single quantum well structure with a well width of L=170 /spl Aring/ serve as the highest level in a four-level laser system. This simple structure has been designed to take advantage of the electro-phonon resonance (EPR) effect induced by electron interactions with longitudinal optical (LO) phonons in GaAs-based two-dimensional semiconductor systems (2DSSs), in achieving population inversion between the second and third electronic subbands. The design allows much greater flexibility in the choice of pumping sources and simplifies considerably the device fabrication. The electronic subband structure of the proposed FIR intersubband laser device has been obtained from a self-consistent calculation via solving coupled Schrodinger and Poisson equations.
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