雪崩倍增在一个紧凑的双极晶体管模型电路仿真

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51056

W. Kloosterman, H. de Graaff

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引用次数: 49

摘要

利用集电极耗尽电容可以精确地模拟双极晶体管中的弱雪崩。该模型具有数值计算速度较快、雪崩参数提取方便等优点。该模型结合了内部电压降和温度依赖性，可以在任何紧凑的双极晶体管模型中实现

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Avalanche multiplication in a compact bipolar transistor model for circuit simulation

Weak avalanche in bipolar transistors can be accurately modeled by using the collector depletion capacitance. This model has the advantages of a relatively fast numerical evaluation and an easily extracted avalanche parameter. The model incorporates internal voltage drop and temperature dependence and can be implemented in any compact bipolar transistor model.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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