一种降低电路和控制复杂度的低待机功率触发器

L. Clark, M. Kabir, J. Knudsen
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引用次数: 9

摘要

使用薄和厚栅极晶体管的触发器结合了高性能和低待机功率。设置和保持时间由在高性能晶体管中实现的主锁存器控制,而当高性能电路电源被门控关闭时,厚门从锁存器在低待机功率下提供状态保持。与先前描述的使用厚栅极阴影锁存器进行低待机功率状态存储的电路相比,该设计降低了电路和断电控制的复杂性。在代工130纳米制程上的测试结果证明了该设计的可行性。研究显示,厚栅极阴影锁存器在低电源电压下具有良好的保持能力,这表明待机期间降低阴影锁存器供电电压将有效减轻大泄漏组件的漏极,而大泄漏组件在低功耗待机模式下日益受到限制。
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A Low Standby Power Flip-flop with Reduced Circuit and Control Complexity
A flip-flop using a combination of thin and thick gate transistors combines high performance and low standby power. Setup and hold times are controlled by the master latch implemented in high performance transistors, while a thick gate slave latch provides state retention at low standby power when the high performance circuit power supply is gated off. The design has reduced circuit and power-down control complexity compared to previously described circuits using thick gate shadow latches for low standby power state storage. Measured test chip results on a foundry 130 nm process prove the viability of the design. The thick gate shadow latches are shown to have good retention capability at low supply voltages, suggesting that reduced shadow latch supply voltage during standby will be effective at mitigating the drain to bulk leakage components that are increasingly limiting for low power standby modes.
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