{"title":"36-94 GHz Gaas混频器二极管燃烬机制","authors":"A. Christou, Y. Anand","doi":"10.1109/IRPS.1980.362930","DOIUrl":null,"url":null,"abstract":"GaAs Schottky barrier diodes fabricated with different high temperature barrier metals were investigated for CW and pulse burnout. The (TiW-Au)-GaAs, (Ti-Mo-Au)-GaAs, and Pd-GaAs diodes, optimized for 36-94 GHz operation were studied in a multi-junction configuation. The burnout mechanism was characterized by a gradual degradation in noise figure. The physical mechanism consisted of a degradation of metal-GaAs interface by the creation of Ga vacancles in the epitaxial layer and a decrease in GaAs mobility. Pulse burnout at X-band consisted of rapid metal punchthrough and catastrophic failure but with a gradual degradation in noise figure. An optimum CW burnout level of 2.0-2.5 watts was obtained with a thermal compression bonded (TiW-Au)-GaAs mixer diode at 36 GHz.","PeriodicalId":270567,"journal":{"name":"18th International Reliability Physics Symposium","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1980-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Gaas Mixer Diode Burnout Mechanisms at 36-94 GHz\",\"authors\":\"A. Christou, Y. Anand\",\"doi\":\"10.1109/IRPS.1980.362930\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaAs Schottky barrier diodes fabricated with different high temperature barrier metals were investigated for CW and pulse burnout. The (TiW-Au)-GaAs, (Ti-Mo-Au)-GaAs, and Pd-GaAs diodes, optimized for 36-94 GHz operation were studied in a multi-junction configuation. The burnout mechanism was characterized by a gradual degradation in noise figure. The physical mechanism consisted of a degradation of metal-GaAs interface by the creation of Ga vacancles in the epitaxial layer and a decrease in GaAs mobility. Pulse burnout at X-band consisted of rapid metal punchthrough and catastrophic failure but with a gradual degradation in noise figure. An optimum CW burnout level of 2.0-2.5 watts was obtained with a thermal compression bonded (TiW-Au)-GaAs mixer diode at 36 GHz.\",\"PeriodicalId\":270567,\"journal\":{\"name\":\"18th International Reliability Physics Symposium\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1980-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"18th International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1980.362930\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"18th International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1980.362930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GaAs Schottky barrier diodes fabricated with different high temperature barrier metals were investigated for CW and pulse burnout. The (TiW-Au)-GaAs, (Ti-Mo-Au)-GaAs, and Pd-GaAs diodes, optimized for 36-94 GHz operation were studied in a multi-junction configuation. The burnout mechanism was characterized by a gradual degradation in noise figure. The physical mechanism consisted of a degradation of metal-GaAs interface by the creation of Ga vacancles in the epitaxial layer and a decrease in GaAs mobility. Pulse burnout at X-band consisted of rapid metal punchthrough and catastrophic failure but with a gradual degradation in noise figure. An optimum CW burnout level of 2.0-2.5 watts was obtained with a thermal compression bonded (TiW-Au)-GaAs mixer diode at 36 GHz.
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