J. Groenen, G. Attolini, E. Chimenti, C. Pelosi, P. P. Lottici, R. Carles
{"title":"GaAs/InAs(111) A和B MOVPE异质结构的原子力显微镜和拉曼散射研究","authors":"J. Groenen, G. Attolini, E. Chimenti, C. Pelosi, P. P. Lottici, R. Carles","doi":"10.1109/SIM.1996.570935","DOIUrl":null,"url":null,"abstract":"Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures\",\"authors\":\"J. Groenen, G. Attolini, E. Chimenti, C. Pelosi, P. P. Lottici, R. Carles\",\"doi\":\"10.1109/SIM.1996.570935\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570935\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570935","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures
Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects.
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