先进自对准多晶硅发射极硅化基极接触处的电子复合

Proceedings of the 1988 Bipolar Circuits and Technology Meeting, Pub Date : 1988-09-12 DOI:10.1109/BIPOL.1988.51079

J. de Jong, R. Lane, J. de Groot, G. Conner

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引用次数: 11

摘要

提出了一种具有多晶硅发射极的自对准高速双极晶体管(HS4)。所述硅化的外基极区域通过氧化物侧壁间隔层与所述多晶硅发射极分离。描述了间隔层宽度和间隔层下掺杂物浓度对基极接触处电子复合电流的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electron recombination at the silicided base contact of an advanced self-aligned poly-silicon emitter

An advanced self-aligned high-speed bipolar transistor (HS4) with a polysilicon emitter is presented. The silicided external base region is separated from the polysilicon emitter by an oxide sidewall spacer. The effect of the spacer width and the dopant concentration underneath this spacer on the electron recombination current at the base contact is described.<>

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Proceedings of the 1988 Bipolar Circuits and Technology Meeting,

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