{"title":"过程监测、诊断和控制专家系统(VLSI和ULSI电路)","authors":"E. H. Nicollian, S.-s. Chen, R. Tsu","doi":"10.1109/ASMC.1990.111217","DOIUrl":null,"url":null,"abstract":"An expert system for monitoring VLSI and ULSI integrated circuit process parameters which is based on the concepts of the charge-capacitance method is described. The process parameters determined are oxide leakage current, impedance to establish electric contact quality, oxide layer thickness, semiconductor doping profile, oxide fixed charge density, interface trap density, semiconductor band bending, and threshold voltage of a MOSFET. Instrumentation and measurement are discussed.<<ETX>>","PeriodicalId":158760,"journal":{"name":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An expert system for process monitoring, diagnostics and control (VLSI and ULSI circuits)\",\"authors\":\"E. H. Nicollian, S.-s. Chen, R. Tsu\",\"doi\":\"10.1109/ASMC.1990.111217\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An expert system for monitoring VLSI and ULSI integrated circuit process parameters which is based on the concepts of the charge-capacitance method is described. The process parameters determined are oxide leakage current, impedance to establish electric contact quality, oxide layer thickness, semiconductor doping profile, oxide fixed charge density, interface trap density, semiconductor band bending, and threshold voltage of a MOSFET. Instrumentation and measurement are discussed.<<ETX>>\",\"PeriodicalId\":158760,\"journal\":{\"name\":\"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-09-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASMC.1990.111217\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE/SEMI Conference on Advanced Semiconductor Manufacturing Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1990.111217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An expert system for process monitoring, diagnostics and control (VLSI and ULSI circuits)
An expert system for monitoring VLSI and ULSI integrated circuit process parameters which is based on the concepts of the charge-capacitance method is described. The process parameters determined are oxide leakage current, impedance to establish electric contact quality, oxide layer thickness, semiconductor doping profile, oxide fixed charge density, interface trap density, semiconductor band bending, and threshold voltage of a MOSFET. Instrumentation and measurement are discussed.<>
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