{"title":"铝质着陆垫hsq相关体积收缩的合理模型及解决方案","authors":"K. Cho, Gyu-Chul Kim, Kee-Moon Chun","doi":"10.1109/ISSM.2001.962958","DOIUrl":null,"url":null,"abstract":"When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design.","PeriodicalId":356225,"journal":{"name":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A plausible model and solutions for an HSQ-related volume shrinkage of aluminum landing pad\",\"authors\":\"K. Cho, Gyu-Chul Kim, Kee-Moon Chun\",\"doi\":\"10.1109/ISSM.2001.962958\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design.\",\"PeriodicalId\":356225,\"journal\":{\"name\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSM.2001.962958\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 IEEE International Symposium on Semiconductor Manufacturing. ISSM 2001. Conference Proceedings (Cat. No.01CH37203)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.2001.962958","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A plausible model and solutions for an HSQ-related volume shrinkage of aluminum landing pad
When low k HSQ (Hydrogen Silsesquiozane) with DOM (Direct-on-Metal) technique is employed for mass-production, an unusual HSQ-related problem of metal volume shrinkage might occur at relatively small metal patterns such as landing pads, leading to yield loss. In this work, we have set up a plausible model for the mechanism of the shrinkage, presented the results from some split experiments conducted on the basis of the model, and finally proposed some ways to solve the problem by optimizing both fabrication processes and layout design.