用于空间应用的CAES QCOTS 512Gb NAND非易失性存储器的SEL和TID特性

2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC) Pub Date : 2021-07-01 DOI:10.1109/NSREC45046.2021.9679329

M. Von Thun, P. Nelson, A. Turnbull, B. Baranski

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引用次数: 1

摘要

在CAES定量现货(QCOTS) 512Gb 3D NAND闪存上进行了单事件锁存(SEL)和总电离剂量(TID)辐射表征。该装置已证明适合于空间应用。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SEL and TID Characterization of a CAES QCOTS 512Gb NAND Flash Nonvolatile Memory for Space Applications

Single Event Latch-up (SEL) and Total Ionizing Dose (TID) radiation characterization was performed on a CAES quantified-off-the-shelf (QCOTS) 512Gb 3D NAND flash memory. The device was shown to be suitable for space applications.

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2021 IEEE Nuclear and Space Radiation Effects Conference (NSREC)

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