用于APT/ET LTE HPUE应用的交流堆叠功率放大器

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2018-10-01 DOI:10.1109/BCICTS.2018.8551064

Kazuo Watanabe, Satoshi Tanaka, Masatoshi Hase, Yuuri Honda, Yusuke Tanaka, Satoshi Arayashiki

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引用次数: 3

摘要

主要是由于相应频带数量的增加，以及为了HPUE (High Power User Equipment，高功率用户设备)的运行，要求手机终端的功率放大器同时提高最大输出功率和增益。有几种方法可以增加发射功率，但这里我们采用了一种交流堆叠方法，将发射极接地晶体管和基极接地晶体管与电容器结合起来。通过应用该方法并对2.5 GHz功率放大器模块进行原型设计，我们在3.4 V电源电压下获得了大约34 dB的增益和29dBm的线性输出，并确认了ET操作中31dBm的输出。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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AC-Stacked Power Amplifier for APT/ET LTE HPUE Applications

Mainly due to the increase in the number of corresponding bands, and to the HPUE (High Power User Equipment) operation, the power amplifier for the mobile phone terminal is required to increase the maximum output power and gain at the same time. There are several ways to increase the transmit power, but here we have applied an AC-stacked method that combines the emitter ground transistor and the base ground transistor with the capacitor. By applying this method and prototyping a 2.5 GHz power amplifier module, we achieved a gain of approximately 34 dB and a linear output 29dBm at a 3.4 V supply voltage and confirmed the output of the 31dBm in the ET operation.

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2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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