MOVPE生长ZnCdSe-ZnSe异质结构:镉前驱体的影响

S. Sanchez, T. Cloitre, P. Bigenwald, A. Chergui, B. Honerlague, R. Aulombard
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摘要

利用MOVPE生长了微枪蓝绿激光器的梯度折射率分离约束异质结构(GRIN-SCH)。以氢化硒、二甲基镉和两种二甲基锌加合物分别作为硒、镉和锌的前驱体进行了初步研究。这种组合导致了强烈的预反应和不良的层形态。为了限制这个问题,我们使用了四氢噻吩:二甲基镉加合物。我们首先研究了使用这种加合物生长的ZnCdSe厚层的质量。利用光致发光和光泵浦实验研究了两种镉金属有机物生长的GRIN-SCH结构。观察了两种样品的受激辐射。
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ZnCdSe-ZnSe heterostructures grown by MOVPE: influence of the cadmium precursor
Graded index separate confinement heterostructures (GRIN-SCH) for microgun blue-green laser were grown by MOVPE. A first study was carried out using selenium hydride, dimethyl cadmium and two dimethylzine adducts as Se, Cd and Zn precursor respectively. This combination leads to intense prereactions and poor layer morphology. To limit this problem we have then used the tetrahydrothiophene:dimethylcadmium adduct. We have first investigated the quality of thick ZnCdSe layers grown using this adduct. GRIN-SCH structures grown using the two cadmium metalorganics were studied using photoluminescence and optical pumping experiments. Stimulated emission was observed for the two kind of samples.
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