非易失性存储器中掺铌La2O3的电荷捕获特性

2013 IEEE International Conference of Electron Devices and Solid-state Circuits Pub Date : 2013-06-03 DOI:10.1109/EDSSC.2013.6628190

R. Shi, X. Huang, C. Leung, P. Lai

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引用次数: 0

摘要

研究了基于MONOS电容器的掺铌La2O3的电荷捕获特性。与纯La2O3 CTL相比，掺铌La2O3 CTL具有更好的记忆窗性能和P/E性能。它还表现出良好的保留特性。因此，掺铌La2O3是一种很有前途的非易失性存储器CTL。

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Charge-trapping characteristics of niobium-doped La2O3 for nonvolatile memory applications

The charge-trapping properties of niobium-doped La₂O₃ have been investigated based on MONOS capacitors. The memory device with niobium-doped La₂O₃ CTL shows better characteristics than that with pure La₂O₃ CTL in memory window and P/E properties. It also shows good retention characteristics. Therefore, the niobium-doped La₂O₃ is a promising candidate as CTL for nonvolatile memory applications.

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2013 IEEE International Conference of Electron Devices and Solid-state Circuits

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