多晶硅高压薄膜晶体管的降解行为

Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614) Pub Date : 2002-11-07 DOI:10.1109/IPFA.2002.1025666

M. Mugnier, S. K. Manhas, D. Chandra Sekhar, S. Krishnan, R. Cross, E. M. Sankara Narayanan, M. M. De Souza, D. Flores, M. Vellvehí, J. Millán

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摘要

报道了多晶硅偏置漏极高压薄膜晶体管(OD-HVTFTs)的降解特性。结果表明，在高栅极偏压下，由于偏移区域的退化，转移特性出现了明显的扭结。这种效应在非氢化hvtft中尤为明显。应力后器件在大气环境中的退火表现出温度依赖性恢复。

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Degradation behaviour of polysilicon high voltage thin film transistors

The degradation characteristics of polycrystalline silicon Off-set Drain High Voltage Thin Film Transistors (OD-HVTFTs) are reported. The results demonstrate a pronounced kink in the transfer characteristics at high gate bias, due to degradation of the offset region. This effect is particularly noticeable in non-hydrogenated HVTFTs. Annealing of devices in atmospheric ambient after stress shows temperature dependent recovery.

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Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614)

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