低共硅化面积密度的预非晶化植入物和原位表面制备优化

2019 19th International Workshop on Junction Technology (IWJT) Pub Date : 2019-06-01 DOI:10.23919/IWJT.2019.8802887

J. Borrel, M. Grégoire, E. Ghegin, S. Joblot, Rémi Vallat, A. Valery, M. Juhel, R. Bianchi

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引用次数: 1

摘要

直到90纳米节点，cosi2硅化物才被广泛应用于半导体工业。最近，为了满足先进数字节点的性能要求，工艺集成已一致转向基于nipt的硅化物[1]。然而，先进的存储和成像技术仍然基于90纳米核心MOS, cosi2硅化物的开发和研究仍然是最感兴趣的，因为新的挑战正在出现。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pre-Amorphization Implants and in-situ Surface Preparation Optimization for Low Co-Silicided Area Density

Until the 90-nm node, CoSi 2 silicide have been widely used in semiconductor industry. More recently, in order to meet performance requirements in advanced digital nodes, process integration have consensually shifted towards NiPt-based silicides [1] . Nevertheless, advanced memory and imaging technologies being still based on 90-nm core MOS, developments and studies on CoSi 2 silicide are still of the best interest as new challenges are emerging.

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2019 19th International Workshop on Junction Technology (IWJT)

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