平面单端千瓦级甚高频E类功率放大器

Renbin Tong, Stefan Book, L. H. Duc, D. Dancila
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引用次数: 1

摘要

介绍了一种用于粒子加速器能量系统的高效率千瓦级E类射频功率放大器。为了提高单芯片高功率千瓦级PA的效率,本文采用了开关模式羽毛的E类方法。它采用强大的单端ldmos晶体管设计,在100 MHz工作时提供1200 W的峰值功率,83%的漏极效率和19.9 dB增益。此外,它在102 MHz工作时提供1010 W的峰值功率,87%的漏极效率和20.4 dB增益。所有测量均在脉冲操作中进行,占空比为5%,脉冲频率为3.5 ms,重复频率为14hz。据笔者所知,这种采用E类方法的千瓦级功率放大器在该领域尚属首次报道。
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A Planar Single-ended Kilowatt-level VHF Class E Power Amplifier
This paper demonstrates a high-efficiency kilowatt-level Class E RF power amplifier which is designed as RF source for particle accelerator energy systems. Class E method of switch mode feathers is employed here to improve efficiency for such high power kilowatts PA in a single chip. It uses a powerful LDMOS-transistor in a single-ended design and provides 1200 W peak power with 83% drain efficiency and 19.9 dB gain at 100 MHz operation. In addition it provides 1010 W peak power with 87% drain efficiency and 20.4 dB gain at 102 MHz operation. All measurements were performed in pulsed operation with a 5% duty cycle, 3.5 ms pulse at 14 Hz repetition. According to the authors’ knowledge, this kilowatts power amplifier adopted Class E method is reported at first time in this field.
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