直接带隙发射器光输出衰减的新模型

18th International Reliability Physics Symposium Pub Date : 1980-04-01 DOI:10.1109/IRPS.1980.362931

P. F. Lindquist

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引用次数: 11

摘要

建立了一种新的定量模型来描述直接带隙GaAs l-xPx发射体的光输出衰减。该模型提供了一种非破坏性筛选技术，可以从初始前向I-V特性计算退化。对700nm光耦合器发射体的实验结果进行了验证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A New Model for Light Output Degradation of Direct Band Gap Emitters

A new quantitative model which describes the light output degradation of direct band gap GaAs l-xPx emitters has been developed. This model provides a non-destructive screening technique whereby the degradation can be calculated from the initial forward I-V characteristic. Good agreement with experimental results for 700nm optocoupler emitters was demonstrated.

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18th International Reliability Physics Symposium

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