一个6nsec CMOS EPLD,带μW备用电源

M. J. Allen
{"title":"一个6nsec CMOS EPLD,带μW备用电源","authors":"M. J. Allen","doi":"10.1109/CICC.1989.56689","DOIUrl":null,"url":null,"abstract":"A description is presented of a 28-pin CMOS EPROM (erasable programmable read-only memory)-based programmable logic device optimized for memory-address-decoding applications. A novel architecture provides high-speed operation at CMOS power levels. Reprogrammability and 100% testability of EPROM technology are added benefits. Active power is less than 25% of slower bipolar solutions, and die area is 74 mil2","PeriodicalId":165054,"journal":{"name":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A 6 nsec CMOS EPLD with μW standby power\",\"authors\":\"M. J. Allen\",\"doi\":\"10.1109/CICC.1989.56689\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A description is presented of a 28-pin CMOS EPROM (erasable programmable read-only memory)-based programmable logic device optimized for memory-address-decoding applications. A novel architecture provides high-speed operation at CMOS power levels. Reprogrammability and 100% testability of EPROM technology are added benefits. Active power is less than 25% of slower bipolar solutions, and die area is 74 mil2\",\"PeriodicalId\":165054,\"journal\":{\"name\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1989-05-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1989 Proceedings of the IEEE Custom Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CICC.1989.56689\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1989 Proceedings of the IEEE Custom Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICC.1989.56689","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

介绍了一种基于28针CMOS EPROM(可擦除可编程只读存储器)的可编程逻辑器件,该器件对存储器地址解码应用进行了优化。一种新颖的架构提供了CMOS功率水平下的高速操作。EPROM技术的可重编程性和100%可测试性是额外的好处。有功功率小于慢双极解决方案的25%,且模具面积为74毫米
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A 6 nsec CMOS EPLD with μW standby power
A description is presented of a 28-pin CMOS EPROM (erasable programmable read-only memory)-based programmable logic device optimized for memory-address-decoding applications. A novel architecture provides high-speed operation at CMOS power levels. Reprogrammability and 100% testability of EPROM technology are added benefits. Active power is less than 25% of slower bipolar solutions, and die area is 74 mil2
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