P. R. Vazquez, J. Grzyb, N. Sarmah, B. Heinemann, U. Pfeiffer
{"title":"采用SiGe HBT技术的219-266 GHz全集成直接转换IQ接收器模块","authors":"P. R. Vazquez, J. Grzyb, N. Sarmah, B. Heinemann, U. Pfeiffer","doi":"10.23919/EUMIC.2017.8230709","DOIUrl":null,"url":null,"abstract":"This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first quadrature receiver chip working at 240 GHz. It has been implemented in a 0.13-μm SiGe HBT technology with fT/fmax of 350/550 GHz. The chip includes an LO path based on a x16 multiplier with a 3-stage PA, driven externally from the PCB at 14–18 GHz. The LO signal is split in quadrature by a broadband coupler. It drives two double-balanced fundamentally-operated mixers with their RF ports connected directly to a wideband lens-integrated linearly-polarized on-chip ring antenna. For low-cost packaging, the chip-on-lens assembly is wire-bonded onto a high-speed PCB, where an on-board 8-section step-impedance microstrip-line low-pass filter has been implemented to compensate the wire-bond inductance at the IF outputs. The 3-dB RF/LO operation BW (with fixed IF) is 47 GHz with peak CG of 7.8 dB, and minimum SSB NF of 11.3 dB, whereas a 3-dB IF bandwidth is at least 12 GHz. All measurement results have been taken at the board-level and include the implementation losses of both the antenna and the on-board high-speed interconnects. The receiver IQ amplitude imbalance is below 1.58 dB for the 210–280 GHz band. In combination with a 9-mm silicon lens, the receiver module provides a directivity of 25.2 to 27.04 dBi from 210 to 280 GHz.","PeriodicalId":120932,"journal":{"name":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","volume":"71 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"16","resultStr":"{\"title\":\"A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology\",\"authors\":\"P. R. Vazquez, J. Grzyb, N. Sarmah, B. Heinemann, U. Pfeiffer\",\"doi\":\"10.23919/EUMIC.2017.8230709\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first quadrature receiver chip working at 240 GHz. It has been implemented in a 0.13-μm SiGe HBT technology with fT/fmax of 350/550 GHz. The chip includes an LO path based on a x16 multiplier with a 3-stage PA, driven externally from the PCB at 14–18 GHz. The LO signal is split in quadrature by a broadband coupler. It drives two double-balanced fundamentally-operated mixers with their RF ports connected directly to a wideband lens-integrated linearly-polarized on-chip ring antenna. For low-cost packaging, the chip-on-lens assembly is wire-bonded onto a high-speed PCB, where an on-board 8-section step-impedance microstrip-line low-pass filter has been implemented to compensate the wire-bond inductance at the IF outputs. The 3-dB RF/LO operation BW (with fixed IF) is 47 GHz with peak CG of 7.8 dB, and minimum SSB NF of 11.3 dB, whereas a 3-dB IF bandwidth is at least 12 GHz. All measurement results have been taken at the board-level and include the implementation losses of both the antenna and the on-board high-speed interconnects. The receiver IQ amplitude imbalance is below 1.58 dB for the 210–280 GHz band. In combination with a 9-mm silicon lens, the receiver module provides a directivity of 25.2 to 27.04 dBi from 210 to 280 GHz.\",\"PeriodicalId\":120932,\"journal\":{\"name\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"volume\":\"71 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"16\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 12th European Microwave Integrated Circuits Conference (EuMIC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/EUMIC.2017.8230709\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 12th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/EUMIC.2017.8230709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 219–266 GHz fully-integrated direct-conversion IQ receiver module in a SiGe HBT technology
This paper presents a fully-integrated direct-conversion fundamentally-operated mixer-first quadrature receiver chip working at 240 GHz. It has been implemented in a 0.13-μm SiGe HBT technology with fT/fmax of 350/550 GHz. The chip includes an LO path based on a x16 multiplier with a 3-stage PA, driven externally from the PCB at 14–18 GHz. The LO signal is split in quadrature by a broadband coupler. It drives two double-balanced fundamentally-operated mixers with their RF ports connected directly to a wideband lens-integrated linearly-polarized on-chip ring antenna. For low-cost packaging, the chip-on-lens assembly is wire-bonded onto a high-speed PCB, where an on-board 8-section step-impedance microstrip-line low-pass filter has been implemented to compensate the wire-bond inductance at the IF outputs. The 3-dB RF/LO operation BW (with fixed IF) is 47 GHz with peak CG of 7.8 dB, and minimum SSB NF of 11.3 dB, whereas a 3-dB IF bandwidth is at least 12 GHz. All measurement results have been taken at the board-level and include the implementation losses of both the antenna and the on-board high-speed interconnects. The receiver IQ amplitude imbalance is below 1.58 dB for the 210–280 GHz band. In combination with a 9-mm silicon lens, the receiver module provides a directivity of 25.2 to 27.04 dBi from 210 to 280 GHz.