硅纳米线中迁移率的取向和应变依赖关系

2012 13th International Conference on Ultimate Integration on Silicon (ULIS) Pub Date : 2012-03-06 DOI:10.1109/ULIS.2012.6193354

Y. Niquet, C. Delerue, D. Rideau

{"title":"硅纳米线中迁移率的取向和应变依赖关系","authors":"Y. Niquet, C. Delerue, D. Rideau","doi":"10.1109/ULIS.2012.6193354","DOIUrl":null,"url":null,"abstract":"We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor >; 2 for moderate axial strains <; 1%.","PeriodicalId":350544,"journal":{"name":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-03-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Orientational and strain dependence of the mobility in silicon nanowires\",\"authors\":\"Y. Niquet, C. Delerue, D. Rideau\",\"doi\":\"10.1109/ULIS.2012.6193354\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor >; 2 for moderate axial strains <; 1%.\",\"PeriodicalId\":350544,\"journal\":{\"name\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-03-06\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2012.6193354\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Conference on Ultimate Integration on Silicon (ULIS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2012.6193354","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们讨论了硅纳米线中电子和空穴的声子限制迁移率与直径和方向的关系。结果表明，< 110 >和< 001 >纳米线是最佳的n型通道，而< 110 >和< 111 >纳米线是最佳的p型通道。我们还研究了拉伸硅纳米线的迁移率。我们发现电子和空穴迁移率可以通过一个因子>来增强或降低;2中等轴向应变<;1%。

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Orientational and strain dependence of the mobility in silicon nanowires

We discuss the phonon-limited mobility of electrons and holes in silicon nanowires as a function of diameter and orientation. We show that 〈110〉 and 〈001〉 nanowires are the best n-type channels, while 〈110〉 and 〈111〉 nanowires are the best p-type channels. We also investigate the mobility in stretched silicon nanowires. We show that the electron and hole mobility can be enhanced or reduced by a factor >; 2 for moderate axial strains <; 1%.

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2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

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