嵌入式电容器用超高介电常数环氧银复合材料

Y. Rao, C. Wong
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引用次数: 30

摘要

与传统的离散电容技术相比,嵌入式电容技术可以提高硅封装效率,提高电性能,降低电子组装成本。开发一种满足电气,可靠性和加工要求的合适材料是将电容器集成到印刷配线板(PWB)中的主要挑战之一,用于要求苛刻的无线,射频便携式电信产品。本文研制了一种具有超高介电常数(/spl epsiv//sub //spl sim/1000)的新型环氧基复合材料。之前的记录/spl epsiv//sub r/=150是最近才报道的。据我们所知,这是迄今为止报道的聚合物基复合材料的最高K值。提高导电填料的浓度,使其接近但不超过聚合物基体内的渗透阈值,可获得较高的介电常数。这种新型超高K材料还具有低介电损耗(<0.02),良好的附着力和完美的多芯片模块层压(MCM-L)工艺兼容性。这种新型复合材料是下一代电子产品集成嵌入式电容器应用的完美候选材料。
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Ultra high dielectric constant epoxy silver composite for embedded capacitor application
Embedded capacitor technology can increase silicon packaging efficiency, improve electrical performance, and reduce electronic assembly cost compared with traditional discrete capacitor technology. Developing a suitable material that satisfies electrical, reliability and processing requirements is one of the major challenges of incorporating capacitors into a printed wiring board (PWB) for demanding wireless, RF portable telecommunication products. A novel epoxy-based composite with very ultra high dielectric constant (/spl epsiv//sub r//spl sim/1000) has been developed in this work. The previous record of /spl epsiv//sub r/=150 was only recently reported. To our best knowledge, this is the highest K value of the polymer-based composite ever reported. High dielectric constant is obtained by increasing the concentration of conductive filler close to but not exceed the percolation threshold within the polymer matrix. This novel ultra high K material also has low dielectric loss (<0.02), good adhesion and perfect multi-chip-module laminate (MCM-L) process compatibility. This novel composite is the perfect material candidate for the integral embedded capacitor applications for next generation electronic products.
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