SOI电流镜中的热流

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272150

F. Yu, M. Cheng

{"title":"SOI电流镜中的热流","authors":"F. Yu, M. Cheng","doi":"10.1109/ISDRS.2003.1272150","DOIUrl":null,"url":null,"abstract":"An analytical heat flow model, accounting for heat exchanges among devices via interconnect/poly lines and heat loss to oxide is developed and applied to study heat flow in SOI current mirror structures. An SOI nMOS current mirror illustrates the thermal coupling and heat flow through the interconnect. The interconnect provides an efficient heat loss medium for the SOI circuit.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Heat flow in SOI current mirrors\",\"authors\":\"F. Yu, M. Cheng\",\"doi\":\"10.1109/ISDRS.2003.1272150\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An analytical heat flow model, accounting for heat exchanges among devices via interconnect/poly lines and heat loss to oxide is developed and applied to study heat flow in SOI current mirror structures. An SOI nMOS current mirror illustrates the thermal coupling and heat flow through the interconnect. The interconnect provides an efficient heat loss medium for the SOI circuit.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"38 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272150\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272150","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

建立了一种考虑器件间通过互连/多聚线的热交换和氧化物热损失的解析热流模型，并将其应用于SOI电流镜结构的热流研究。一个SOI nMOS电流镜显示了通过互连的热耦合和热流。该互连为SOI电路提供了有效的热损耗介质。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heat flow in SOI current mirrors

An analytical heat flow model, accounting for heat exchanges among devices via interconnect/poly lines and heat loss to oxide is developed and applied to study heat flow in SOI current mirror structures. An SOI nMOS current mirror illustrates the thermal coupling and heat flow through the interconnect. The interconnect provides an efficient heat loss medium for the SOI circuit.

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International Semiconductor Device Research Symposium, 2003

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