{"title":"传感器用硅膜中离子通道的布朗动力学模拟","authors":"C. Berti, S. Furini, E. Sangiorgi, C. Fiegna","doi":"10.1109/ULIS.2011.5757953","DOIUrl":null,"url":null,"abstract":"In this work we present a three-dimensional numerical simulation technique for the study of ion permeation through ion channels embedded in silicon membranes, that can be exploited for sensor applications. The results of this work clarify how the charges embedded in the protein forming the ion channel can influence ionic conductance through silicon membrane slabs, controlling the channel conductance and selectivity with respect to ionic species.","PeriodicalId":146779,"journal":{"name":"Ulis 2011 Ultimate Integration on Silicon","volume":"157 16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-03-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications\",\"authors\":\"C. Berti, S. Furini, E. Sangiorgi, C. Fiegna\",\"doi\":\"10.1109/ULIS.2011.5757953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we present a three-dimensional numerical simulation technique for the study of ion permeation through ion channels embedded in silicon membranes, that can be exploited for sensor applications. The results of this work clarify how the charges embedded in the protein forming the ion channel can influence ionic conductance through silicon membrane slabs, controlling the channel conductance and selectivity with respect to ionic species.\",\"PeriodicalId\":146779,\"journal\":{\"name\":\"Ulis 2011 Ultimate Integration on Silicon\",\"volume\":\"157 16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-03-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Ulis 2011 Ultimate Integration on Silicon\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ULIS.2011.5757953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Ulis 2011 Ultimate Integration on Silicon","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ULIS.2011.5757953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Brownian dynamics simulation of ion channels embedded in silicon membranes for sensor applications
In this work we present a three-dimensional numerical simulation technique for the study of ion permeation through ion channels embedded in silicon membranes, that can be exploited for sensor applications. The results of this work clarify how the charges embedded in the protein forming the ion channel can influence ionic conductance through silicon membrane slabs, controlling the channel conductance and selectivity with respect to ionic species.