双金属栅电极与CMOS高k介电体的相容性

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269290

Jae-Hoon Lee, You-Seok Suh, H. Lazar, R. Jha, J. Gurganus, Yanxia Lin, V. Misra

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引用次数: 30

摘要

研究了Ru、Ru- ta合金、TaN和TaSiN等双金属电极在低EOT单层HfO/ sub2 //SiO/ sub2 /栅极介质上的性能。结果表明，金属闸门在HfO/sub 2/和SiO/sub 2/上的功函数值相近。还对选定的金属在上述介质上进行了热退火研究，以评估EOT和V/sub FB/值的变化。

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Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS

Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO/sub 2/ and stacked HfO/sub 2//SiO/sub 2/ gate dielectrics. It was found that the work function values of metal gates on HfO/sub 2/ and on SiO/sub 2/ are similar. Thermal anneal studies of selected metals on the above dielectrics were also performed to evaluate the change in EOT and V/sub FB/ values.

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IEEE International Electron Devices Meeting 2003

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