P. Page, C. Steinbeiser, T. Landon, G. Burgin, R. Hajji, R. Branson, O. Krutko, J. Delaney, L. Witkowski
{"title":"325W HVHBT Doherty Final和LDMOS Doherty驱动器,增益为30dB, PAE为54%,在2c11 6.5dB PAR下线性化至-55dBc","authors":"P. Page, C. Steinbeiser, T. Landon, G. Burgin, R. Hajji, R. Branson, O. Krutko, J. Delaney, L. Witkowski","doi":"10.1109/CSICS.2011.6062433","DOIUrl":null,"url":null,"abstract":"A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD friendly characteristics of the HVHBT Doherty final enable use of a non-linear Doherty driver while maintaining the same ease of correction for the overall lineup.","PeriodicalId":275064,"journal":{"name":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR\",\"authors\":\"P. Page, C. Steinbeiser, T. Landon, G. Burgin, R. Hajji, R. Branson, O. Krutko, J. Delaney, L. Witkowski\",\"doi\":\"10.1109/CSICS.2011.6062433\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD friendly characteristics of the HVHBT Doherty final enable use of a non-linear Doherty driver while maintaining the same ease of correction for the overall lineup.\",\"PeriodicalId\":275064,\"journal\":{\"name\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2011-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CSICS.2011.6062433\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CSICS.2011.6062433","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
325W HVHBT Doherty Final and LDMOS Doherty Driver with 30dB Gain and 54% PAE Linearized to -55dBc for 2c11 6.5dB PAR
A two stage high power amplifier consisting of a 325W High Voltage HBT (HVHBT) Doherty final and a 20W LDMOS Doherty driver has been developed for use in wireless basestation applications. The lineup achieved greater than 54% PAE at 75W (48.77dBm) average output power with 30dB gain while achieving -55dBc linearized ACPR at 5MHz offset using a 2C11 WCDMA input signal with 6.5dB PAR signal. The DPD friendly characteristics of the HVHBT Doherty final enable use of a non-linear Doherty driver while maintaining the same ease of correction for the overall lineup.