D. Terin, O. Belobrovaya, V. Galushka, V. Sidorov, V. Polyanskaya
{"title":"γ辐照下硅纳米晶须的光学和结构性质","authors":"D. Terin, O. Belobrovaya, V. Galushka, V. Sidorov, V. Polyanskaya","doi":"10.1109/APEDE.2018.8542321","DOIUrl":null,"url":null,"abstract":"The study of the formation of silicon nanowhiskers by the method of non-current two-step etching is presented in this paper. Silicon nanowhiskers were obtained on unirradiated single-crystal silicon and on irradiated γ-quantum substrates. At an etching time of 20 to 50 minutes, the length of nanowhiskers is independent of the radiation dose (with a diameter of 70 to 140 nm), however, with increasing etching time, the length of the nanowhiskers increases sharply with increasing radiation dose. The optical and structural properties of silicon nanowhiskers under the influence of gamma irradiation are discussed.","PeriodicalId":311577,"journal":{"name":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical and Structural Properties of Silicon Nanowhiskers Under the Influence of γ-Irradiation\",\"authors\":\"D. Terin, O. Belobrovaya, V. Galushka, V. Sidorov, V. Polyanskaya\",\"doi\":\"10.1109/APEDE.2018.8542321\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The study of the formation of silicon nanowhiskers by the method of non-current two-step etching is presented in this paper. Silicon nanowhiskers were obtained on unirradiated single-crystal silicon and on irradiated γ-quantum substrates. At an etching time of 20 to 50 minutes, the length of nanowhiskers is independent of the radiation dose (with a diameter of 70 to 140 nm), however, with increasing etching time, the length of the nanowhiskers increases sharply with increasing radiation dose. The optical and structural properties of silicon nanowhiskers under the influence of gamma irradiation are discussed.\",\"PeriodicalId\":311577,\"journal\":{\"name\":\"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"volume\":\"17 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/APEDE.2018.8542321\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Actual Problems of Electron Devices Engineering (APEDE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEDE.2018.8542321","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Optical and Structural Properties of Silicon Nanowhiskers Under the Influence of γ-Irradiation
The study of the formation of silicon nanowhiskers by the method of non-current two-step etching is presented in this paper. Silicon nanowhiskers were obtained on unirradiated single-crystal silicon and on irradiated γ-quantum substrates. At an etching time of 20 to 50 minutes, the length of nanowhiskers is independent of the radiation dose (with a diameter of 70 to 140 nm), however, with increasing etching time, the length of the nanowhiskers increases sharply with increasing radiation dose. The optical and structural properties of silicon nanowhiskers under the influence of gamma irradiation are discussed.
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