{"title":"基于90nm CMOS的0.9V 5kS/s电阻的时域温度传感器，校准精度为- 0.6°C/0.8°C，范围为- 40°C至125°C","authors":"Xian Tang, K. Pun, W. Ng","doi":"10.1109/ASSCC.2013.6691009","DOIUrl":null,"url":null,"abstract":"This paper presents a new low-voltage temperature sensor which uses resistor as the sensing element and digitizes in time domain. Fabricated in 90nm CMOS, the sensor measures an inaccuracy of -0.6°C/0.8°C over -40°C~125°C range and a peak supply sensitivity of 4°C/V after two-point calibration at 25°C and 45°C. It dissipates 11.8μW at a sampling rate of 5kS/s from a 0.9V supply.","PeriodicalId":296544,"journal":{"name":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-12-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"A 0.9V 5kS/s resistor-based time-domain temperature sensor in 90nm CMOS with calibrated inaccuracy of −0.6°C/0.8°C from −40°C to 125°C\",\"authors\":\"Xian Tang, K. Pun, W. Ng\",\"doi\":\"10.1109/ASSCC.2013.6691009\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new low-voltage temperature sensor which uses resistor as the sensing element and digitizes in time domain. Fabricated in 90nm CMOS, the sensor measures an inaccuracy of -0.6°C/0.8°C over -40°C~125°C range and a peak supply sensitivity of 4°C/V after two-point calibration at 25°C and 45°C. It dissipates 11.8μW at a sampling rate of 5kS/s from a 0.9V supply.\",\"PeriodicalId\":296544,\"journal\":{\"name\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"volume\":\"37 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-12-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASSCC.2013.6691009\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE Asian Solid-State Circuits Conference (A-SSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASSCC.2013.6691009","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 0.9V 5kS/s resistor-based time-domain temperature sensor in 90nm CMOS with calibrated inaccuracy of −0.6°C/0.8°C from −40°C to 125°C
This paper presents a new low-voltage temperature sensor which uses resistor as the sensing element and digitizes in time domain. Fabricated in 90nm CMOS, the sensor measures an inaccuracy of -0.6°C/0.8°C over -40°C~125°C range and a peak supply sensitivity of 4°C/V after two-point calibration at 25°C and 45°C. It dissipates 11.8μW at a sampling rate of 5kS/s from a 0.9V supply.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
