使用标准晶圆片制造能够进行TEM测量的电线宽结构

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307) Pub Date : 1999-03-15 DOI:10.1109/ICMTS.1999.766208

C. Munro, A. Gundlach, J. Stevenson, D. W. Travis, S. Smith, N. Rankin, A. Walton

{"title":"使用标准晶圆片制造能够进行TEM测量的电线宽结构","authors":"C. Munro, A. Gundlach, J. Stevenson, D. W. Travis, S. Smith, N. Rankin, A. Walton","doi":"10.1109/ICMTS.1999.766208","DOIUrl":null,"url":null,"abstract":"This paper presents details of a process for fabricating electrical linewidth structures over etched windows so that they potentially can be inspected with a TEM. These ELISTEMs (electrical linewidth structures for TEM) are fabricated using standard <100> silicon wafers. Measurements are compared with those obtained for conventional linewidth structures.","PeriodicalId":273071,"journal":{"name":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The fabrication of electrical linewidth structures capable of TEM measurement using standard <100> wafers\",\"authors\":\"C. Munro, A. Gundlach, J. Stevenson, D. W. Travis, S. Smith, N. Rankin, A. Walton\",\"doi\":\"10.1109/ICMTS.1999.766208\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents details of a process for fabricating electrical linewidth structures over etched windows so that they potentially can be inspected with a TEM. These ELISTEMs (electrical linewidth structures for TEM) are fabricated using standard <100> silicon wafers. Measurements are compared with those obtained for conventional linewidth structures.\",\"PeriodicalId\":273071,\"journal\":{\"name\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"volume\":\"62 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-03-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICMTS.1999.766208\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMTS.1999.766208","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文详细介绍了在蚀刻窗口上制造电线宽结构的工艺，以便可以用TEM检查它们。这些ELISTEMs (TEM的电气线宽结构)是使用标准硅片制造的。测量结果与传统线宽结构的测量结果进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

The fabrication of electrical linewidth structures capable of TEM measurement using standard <100> wafers

This paper presents details of a process for fabricating electrical linewidth structures over etched windows so that they potentially can be inspected with a TEM. These ELISTEMs (electrical linewidth structures for TEM) are fabricated using standard <100> silicon wafers. Measurements are compared with those obtained for conventional linewidth structures.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ICMTS 1999. Proceedings of 1999 International Conference on Microelectronic Test Structures (Cat. No.99CH36307)

自引率

0.00%

发文量