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引用次数: 1

摘要

只提供摘要形式。随着基于硅锗硅的双极晶体管迅速进入高频小信号和模拟应用领域,它们是否会永久取代砷化镓或其他化合物半导体异质结双极晶体管(hbt)是一个问题。通常,回答这个问题的尝试会引发更多的问题,因为它们是基于苹果与橙子的比较。在这次演讲中,我们试图通过检查和比较材料的内在物理特性和这些晶体管的电气参数,对SiGe和GaAs hbt进行苹果到苹果的比较。对结构比较先进、设计规则相同的装置进行了比较。结论是,通常实践的SiGe HBT根本不是真正的异质结双极晶体管,并且GaAs HBT本质上比SiGe“HBT”更快。因此,GaAs和其他化合物半导体hbt将在更高速度产生重要影响的应用中占有一席之地。与GaAs HBT相比,SiGe双极晶体管的固有优势在于它与CMOS VLSI工艺的兼容性。
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With SiGe, who needs GaAs?
Summary form only given. With SiGe-based bipolar transistors making rapid inroads into high-frequency small-signal and analog applications, there is the question of whether they will permanently displace GaAs or other compound-semiconductor heterojunction bipolar transistors (HBTs). Often the attempts to answer this question have raised more questions because they were based on apple-to-orange comparisons. In this talk, we attempt to make an apple-to-apple comparison of the SiGe and GaAs HBTs by examining and comparing the intrinsic physical properties of the materials and the electrical parameters of these transistors. The comparison is made for devices of comparably advanced structures and of the same design rules. The conclusions are that the commonly practiced SiGe HBT is not really a heterojunction bipolar transistor at all, and that GaAs HBTs are inherently faster than SiGe "HBTs". Therefore, GaAs and other compound-semiconductor HBTs will have a place in applications where the higher speed makes an important difference. The inherent advantage of SiGe bipolar transistor over GaAs HBT lies in its being compatible with CMOS VLSI processing.
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