{"title":"采用常关断GaN功率晶体管和自适应死区时间控制栅极驱动器的99%效率1 mhz 1.6 kw零电压开关升压变换器","authors":"Jing Xue, K. Ngo, Hoi Lee","doi":"10.1109/EDSSC.2013.6628142","DOIUrl":null,"url":null,"abstract":"A zero-voltage-switching (ZVS) boost converter using normally-off GaN power transistors and an on-chip gate driver are presented in this paper. The ZVS and adaptive dead-time control are developed to minimize the capacitive switching loss and body-diode recovery loss of the boost converter. Both high-side and low-side gate drivers provide ~6.8-ns propagation delays and ~2-ns rise/fall time, enabling MHz operation of the converter. With the proposed on-chip adaptive dead-time controlled gate drivers implemented in a 0.35-μm high-voltage CMOS process and 600-V normally-off GaN power transistors, the proposed 400-V ZVS boost converter delivers an output power of 1.6 kW and achieves a peak power efficiency of 99.2% at 1-MHz switching frequency.","PeriodicalId":333267,"journal":{"name":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-06-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":"{\"title\":\"A 99%-efficiency 1-MHz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers\",\"authors\":\"Jing Xue, K. Ngo, Hoi Lee\",\"doi\":\"10.1109/EDSSC.2013.6628142\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A zero-voltage-switching (ZVS) boost converter using normally-off GaN power transistors and an on-chip gate driver are presented in this paper. The ZVS and adaptive dead-time control are developed to minimize the capacitive switching loss and body-diode recovery loss of the boost converter. Both high-side and low-side gate drivers provide ~6.8-ns propagation delays and ~2-ns rise/fall time, enabling MHz operation of the converter. With the proposed on-chip adaptive dead-time controlled gate drivers implemented in a 0.35-μm high-voltage CMOS process and 600-V normally-off GaN power transistors, the proposed 400-V ZVS boost converter delivers an output power of 1.6 kW and achieves a peak power efficiency of 99.2% at 1-MHz switching frequency.\",\"PeriodicalId\":333267,\"journal\":{\"name\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-06-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"14\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2013 IEEE International Conference of Electron Devices and Solid-state Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EDSSC.2013.6628142\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Conference of Electron Devices and Solid-state Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2013.6628142","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
摘要
介绍了一种采用常关式GaN功率晶体管和片上栅极驱动器的零电压开关(ZVS)升压变换器。为了减小升压变换器的电容开关损耗和体二极管恢复损耗,提出了ZVS和自适应死区时间控制。高侧和低侧栅极驱动器都提供~6.8 ns的传播延迟和~2 ns的上升/下降时间,使转换器能够在MHz范围内工作。采用0.35 μm高压CMOS工艺和600 v常关GaN功率晶体管实现片上自适应死区控制栅极驱动器,400 v ZVS升压转换器在1 mhz开关频率下输出功率为1.6 kW,峰值功率效率为99.2%。
A 99%-efficiency 1-MHz 1.6-kW zero-voltage-switching boost converter using normally-off GaN power transistors and adaptive dead-time controlled gate drivers
A zero-voltage-switching (ZVS) boost converter using normally-off GaN power transistors and an on-chip gate driver are presented in this paper. The ZVS and adaptive dead-time control are developed to minimize the capacitive switching loss and body-diode recovery loss of the boost converter. Both high-side and low-side gate drivers provide ~6.8-ns propagation delays and ~2-ns rise/fall time, enabling MHz operation of the converter. With the proposed on-chip adaptive dead-time controlled gate drivers implemented in a 0.35-μm high-voltage CMOS process and 600-V normally-off GaN power transistors, the proposed 400-V ZVS boost converter delivers an output power of 1.6 kW and achieves a peak power efficiency of 99.2% at 1-MHz switching frequency.