侧面效应对微波场效应管直流和交流性能影响的实验证据

H. Chen, G. Huang
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引用次数: 0

摘要

我们报告了对传统GaAs场效应管直流和交流性能的台面-侧壁效应的研究。我们成功地制作了大量具有不同数量的平台侧壁的器件,并对其进行了比较。直流和交流性能的实验测量表明,平台侧壁对器件的性能确实起着重要的作用。
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Experimental evidence of side-wall effects on microwave-FET DC and AC performances
We report the investigation of mesa-sidewall effects on the DC and AC performance for conventional GaAs FETs. A great number of devices with different number of mesa-sidewalls were successfully fabricated and compared Experimental measurements including DC and AC performance indicate that the mesa sidewall really plays an important role on the device performance.
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