室温SiC-SiC直接晶圆键合的SAB方法

2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) Pub Date : 2017-05-01 DOI:10.23919/LTB-3D.2017.7947399

F. Mu, K. Iguchi, H. Nakazawa, Yoshikazu Takahashi, M. Fujino, T. Suga

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引用次数: 0

摘要

比较了标准表面活化键合(SAB)和含硅氩离子束修饰表面活化键合(SAB)在室温下对SiC-SiC晶圆直接键合的键能、界面结构和组成。与标准SAB相比，含Si- Ar离子束修饰SAB得到的键合界面强度大于30%，这应该是由于含Si- Ar离子束在表面活化过程中原位Si补偿所致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Room temperature SiC-SiC direct wafer bonding by SAB methods

Room temperature direct wafer bonding of SiC-SiC by standard surface-activated bonding (SAB) and modified SAB with a Si-containing Ar ion beam were compared in terms of bonding energy, interface structure and composition. Compared with that obtained by standard SAB, the bonding interface obtained by modified SAB with a Si-containing Ar ion beam is >30% stronger, which should be due to the in situ Si compensation during surface activation by the Si-containing Ar ion beam.

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2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)

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