3D集成电路:实现完全集成、密集和高效电源的机会

G. Pillonnet, Nicolas Jeanniot, P. Vivet
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引用次数: 8

摘要

借助3D技术,封装内解决方案允许为多核处理器设计集成,高效和粒度的电源。由于转换器设计从缩放中获得的好处很少,3DIC允许选择最佳技术,即适合DC-DC转换器设计的技术。本文评估了采用有源(28和65nm CMOS节点)和无源(聚、MIM、垂直电容器)层组合的片上和封装内转换器之间可实现的功率效率。基于相同的负载功耗,片上和封装内开关电容转换器在1mm2硅面积上分别实现65%和78%的效率。额外的高密度电容层(100nF/mm2)在相同的表面上可将65nm的效率提高20多个点,这强调了对专用技术的需求,以实现更好的电源管理集成。本文表明,封装内电源管理是完全集成、密集和高效电源的关键替代方案。
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3D ICs: An opportunity for fully-integrated, dense and efficient power supplies
With 3D technologies, the in-package solution allows integrated, efficient and granular power supplies to be designed for multi-core processors. As the converter design obtains few benefits from the scaling, 3DIC allows the best technology to be chosen i.e. one which suits the DC-DC converter design. This paper evaluates the achievable power efficiency between on-die and in-package converters using a combination of active (28 and 65nm CMOS nodes) and passive (poly, MIM, vertical capacitor) layers. Based on the same load power consumption, on-die and in-package switched capacitor converters achieve 65% and 78% efficiency, respectively, in a 1mm2 silicon area. An additional high density capacitance layer (100nF/mm2) improves efficiency by more than 20 points in 65nm for the same surface which emphasizes the need for dedicated technology for better power management integration. This paper shows that in-package power management is a key alternative for fully-integrated, dense and efficient power supplies.
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