{"title":"n-InP光化学蚀刻:温度、功率和频率的研究","authors":"T. Lowes, D. Cassidy","doi":"10.1109/ICIPRM.1990.203017","DOIUrl":null,"url":null,"abstract":"Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the chopping frequency in the range 100-3200 Hz. These results are explained on the basis of a rate equation model for material removal. An application for PC etching is presented in which n-InP wafers 35-200- mu m thick were prepared for observation in the transmission electron microscope.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Photochemical etching of n-InP: temperature, power and frequency studies\",\"authors\":\"T. Lowes, D. Cassidy\",\"doi\":\"10.1109/ICIPRM.1990.203017\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the chopping frequency in the range 100-3200 Hz. These results are explained on the basis of a rate equation model for material removal. An application for PC etching is presented in which n-InP wafers 35-200- mu m thick were prepared for observation in the transmission electron microscope.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.203017\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.203017","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photochemical etching of n-InP: temperature, power and frequency studies
Photochemical (PC) etching of n-InP using an Ar/sup +/ laser and dilute phosphoric acid solutions was studied as a function of temperature, power, illumination frequency, and duty cycle. The process was found to be reaction-rate limited with an activation energy >or=0.34 eV. The photo-etch rate, i.e. the etch rate divided by the fraction of time the Ar/sup +/ light is on, was found to be a function of the illumination duty cycle but not the chopping frequency in the range 100-3200 Hz. These results are explained on the basis of a rate equation model for material removal. An application for PC etching is presented in which n-InP wafers 35-200- mu m thick were prepared for observation in the transmission electron microscope.<>
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