{"title":"FSG沉积后金属夹伤问题的研究","authors":"Yan-ping Liu, Fei Li","doi":"10.1109/ICSICT.2008.4734773","DOIUrl":null,"url":null,"abstract":"Metal clipping issue was observed in semiconductor manufacturing, which will result in the electronic property failure of metal line. The process parameters of HDP FSG deposition were investigated in order to discover the mechanism of metal clipping. The results indicated that ion bombardment effect is the dominated factor for metal clipping, it also accelerate the chemical etch of F ions. According to the standard manufacturing procedure, several progresses were used to avoid the metal clipping issue successfully.","PeriodicalId":436457,"journal":{"name":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Investigation on the metal-clipping issue after FSG deposition\",\"authors\":\"Yan-ping Liu, Fei Li\",\"doi\":\"10.1109/ICSICT.2008.4734773\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Metal clipping issue was observed in semiconductor manufacturing, which will result in the electronic property failure of metal line. The process parameters of HDP FSG deposition were investigated in order to discover the mechanism of metal clipping. The results indicated that ion bombardment effect is the dominated factor for metal clipping, it also accelerate the chemical etch of F ions. According to the standard manufacturing procedure, several progresses were used to avoid the metal clipping issue successfully.\",\"PeriodicalId\":436457,\"journal\":{\"name\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"volume\":\"10 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-12-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 9th International Conference on Solid-State and Integrated-Circuit Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2008.4734773\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 9th International Conference on Solid-State and Integrated-Circuit Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2008.4734773","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Investigation on the metal-clipping issue after FSG deposition
Metal clipping issue was observed in semiconductor manufacturing, which will result in the electronic property failure of metal line. The process parameters of HDP FSG deposition were investigated in order to discover the mechanism of metal clipping. The results indicated that ion bombardment effect is the dominated factor for metal clipping, it also accelerate the chemical etch of F ions. According to the standard manufacturing procedure, several progresses were used to avoid the metal clipping issue successfully.
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