SOI智能电源技术中的新型漏电机制

2005 IEEE International SOI Conference Proceedings Pub Date : 2005-12-27 DOI:10.1109/SOI.2005.1563524

S. Schwantes, A. Heid, F. Dietz, M. Graf, V. Dudek

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引用次数: 0

摘要

由于更好的隔离性，智能电源SOI技术正变得越来越流行。SOI技术引入了一种新的电极，即衬底电极，称为后门。有几篇论文报道了后门感应漏电流。这项工作报告了一种新的泄漏机制，由邻近装置和后门的相互作用引起。此外，还提出了0.8 /spl mu/m 80V SOI技术的可能对策。

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A new leakage mechanism in SOI smart power technologies

Smart power SOI technologies are becoming popular because of better isolation. The SOI technology introduces a new electrode, the substrate electrode referred to as back gate. Several papers have reported back gate induced leakage current. This work reports a new leakage mechanism induced by the interaction of the neighbouring device and that back gate. Moreover, possible countermeasures for a 0.8 /spl mu/m 80V SOI technology are presented.

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2005 IEEE International SOI Conference Proceedings

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