基于窄带和volterra的高频放大器行为模型

A. Zhu, Tianhai Wang, T. Brazil
{"title":"基于窄带和volterra的高频放大器行为模型","authors":"A. Zhu, Tianhai Wang, T. Brazil","doi":"10.1109/ARFTG.2001.327482","DOIUrl":null,"url":null,"abstract":"This contribution addresses the problem of finding a simplified but effective high-level representation of non-linear high-frequency systems, specifically amplifiers, which may exhibit considerable underlying complexity at the detailed circuit/device level of implementation. Two approaches are pursued, one being based on conventional narrow¿band representations, but exploring the fact that different such realisations are possible from the same set of measured (or simulated) terminal data, not all of which exhibit comparable accuracy of representation. The second approach is based on a discrete-time Volterra formulation offering considerable generality and improved computational properties.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Narrowband and Volterra-Based Behavioral Models of High Frequency Amplifiers\",\"authors\":\"A. Zhu, Tianhai Wang, T. Brazil\",\"doi\":\"10.1109/ARFTG.2001.327482\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This contribution addresses the problem of finding a simplified but effective high-level representation of non-linear high-frequency systems, specifically amplifiers, which may exhibit considerable underlying complexity at the detailed circuit/device level of implementation. Two approaches are pursued, one being based on conventional narrow¿band representations, but exploring the fact that different such realisations are possible from the same set of measured (or simulated) terminal data, not all of which exhibit comparable accuracy of representation. The second approach is based on a discrete-time Volterra formulation offering considerable generality and improved computational properties.\",\"PeriodicalId\":331830,\"journal\":{\"name\":\"58th ARFTG Conference Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"58th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2001.327482\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2001.327482","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

摘要

这一贡献解决了寻找非线性高频系统(特别是放大器)的简化但有效的高级表示的问题,这些系统在详细的电路/器件实现级别上可能表现出相当大的潜在复杂性。我们采用了两种方法,一种是基于传统的窄带表示,但探索了这样一个事实,即不同的实现可能来自同一组测量(或模拟)终端数据,并非所有这些数据都表现出可比较的表示精度。第二种方法基于离散时间Volterra公式,提供了相当大的通用性和改进的计算性能。
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Narrowband and Volterra-Based Behavioral Models of High Frequency Amplifiers
This contribution addresses the problem of finding a simplified but effective high-level representation of non-linear high-frequency systems, specifically amplifiers, which may exhibit considerable underlying complexity at the detailed circuit/device level of implementation. Two approaches are pursued, one being based on conventional narrow¿band representations, but exploring the fact that different such realisations are possible from the same set of measured (or simulated) terminal data, not all of which exhibit comparable accuracy of representation. The second approach is based on a discrete-time Volterra formulation offering considerable generality and improved computational properties.
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