{"title":"基于测量的ldmosfet电热建模","authors":"P. Roblin","doi":"10.1109/ARFTG.2001.327496","DOIUrl":null,"url":null,"abstract":"This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.","PeriodicalId":331830,"journal":{"name":"58th ARFTG Conference Digest","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2001-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Measurement Based Electro-Thermal Modeling of LDMOSFETs\",\"authors\":\"P. Roblin\",\"doi\":\"10.1109/ARFTG.2001.327496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.\",\"PeriodicalId\":331830,\"journal\":{\"name\":\"58th ARFTG Conference Digest\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"58th ARFTG Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ARFTG.2001.327496\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"58th ARFTG Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ARFTG.2001.327496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Measurement Based Electro-Thermal Modeling of LDMOSFETs
This paper presents a new approach for the electro-thermal characterization and modeling of LDMOSFETs without using pulsed-IV and pulsed-RF measurement data. The characterization method, which relies on an infrared thermometer to measure the device surface temperature, automatically follows the constant LDMOSFET power contours in order to efficiently acquire in a single sweep of the substrate temperature the targeted iso-thermal IV and microwave measurements. The comparison of the acquired iso-thermal IV's with pulsed-IVs and also with the extracted microwave gm reveals the presence of a relatively small low-frequency dispersion in LDMOSFETS. The temperature and bias dependence of the equivalent circuit model parameters is extracted from the small-signal microwave data acquired. Optimized tensor-product B-splines that distribute knots to minimize fitting errors are then used to represent the equivalent-circuit model parameters and extract the large signal model as a function of voltages and temperature. The accuracy of this measurement-based LDMOSFET model which is implemented in ADS is then verified by comparing the simulated and measured harmonic and IMD large-signal response of a power amplifier.