镍铬薄膜的电阻特性及其对集成电路的影响

1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105) Pub Date : 1998-10-21 DOI:10.1109/ICSICT.1998.785817

Lixin Zhao, G. Shen, G. Gao, Chen Xu, Jinyu Du, Deshu Zou, Jianxing Chen

{"title":"镍铬薄膜的电阻特性及其对集成电路的影响","authors":"Lixin Zhao, G. Shen, G. Gao, Chen Xu, Jinyu Du, Deshu Zou, Jianxing Chen","doi":"10.1109/ICSICT.1998.785817","DOIUrl":null,"url":null,"abstract":"Ni-Cr thin films with different thicknesses have been fabricated on the dielectric substrate silicon dioxide (SiO/sub 2/) by using magnetron sputtering and vacuum evaporation and annealed at different temperatures. The sheet resistance and the strip line microwave impedance of the Ni-Cr thin film are measured. The results show that they are influenced strongly by the thickness and the annealing temperature. These problems are analyzed in detail including the effects of the carrier tunnel transport, the oxidation, the condensation and the stabilization in the thin film.","PeriodicalId":286980,"journal":{"name":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","volume":"94 4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"The resistance characteristics of the Ni-Cr thin films and their influence on the integrated circuits\",\"authors\":\"Lixin Zhao, G. Shen, G. Gao, Chen Xu, Jinyu Du, Deshu Zou, Jianxing Chen\",\"doi\":\"10.1109/ICSICT.1998.785817\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Ni-Cr thin films with different thicknesses have been fabricated on the dielectric substrate silicon dioxide (SiO/sub 2/) by using magnetron sputtering and vacuum evaporation and annealed at different temperatures. The sheet resistance and the strip line microwave impedance of the Ni-Cr thin film are measured. The results show that they are influenced strongly by the thickness and the annealing temperature. These problems are analyzed in detail including the effects of the carrier tunnel transport, the oxidation, the condensation and the stabilization in the thin film.\",\"PeriodicalId\":286980,\"journal\":{\"name\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"volume\":\"94 4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.1998.785817\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.1998.785817","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

采用磁控溅射和真空蒸发的方法，在介质为二氧化硅(SiO/ sub2 /)的衬底上制备了不同厚度的Ni-Cr薄膜，并在不同温度下退火。测量了镍铬薄膜的片电阻和带线微波阻抗。结果表明，厚度和退火温度对其影响较大。详细分析了载流子隧道输运、氧化、缩合和薄膜稳定等问题的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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The resistance characteristics of the Ni-Cr thin films and their influence on the integrated circuits

Ni-Cr thin films with different thicknesses have been fabricated on the dielectric substrate silicon dioxide (SiO/sub 2/) by using magnetron sputtering and vacuum evaporation and annealed at different temperatures. The sheet resistance and the strip line microwave impedance of the Ni-Cr thin film are measured. The results show that they are influenced strongly by the thickness and the annealing temperature. These problems are analyzed in detail including the effects of the carrier tunnel transport, the oxidation, the condensation and the stabilization in the thin film.

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1998 5th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.98EX105)

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