R. MajidiAhy, S. Bandy, L. Ching, M. Glenn, C. Nishimoto, S. Silverman, S. Weng, G. Zdasiuk, Z. Tan, M. Riaziat
{"title":"基于inp的非线性优化跨导场效应晶体管","authors":"R. MajidiAhy, S. Bandy, L. Ching, M. Glenn, C. Nishimoto, S. Silverman, S. Weng, G. Zdasiuk, Z. Tan, M. Riaziat","doi":"10.1109/ICIPRM.1990.202993","DOIUrl":null,"url":null,"abstract":"A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<<ETX>>","PeriodicalId":138960,"journal":{"name":"International Conference on Indium Phosphide and Related Materials","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-04-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InP-based nonlinearly-optimized transconductance field-effect transistor (NOTFET)\",\"authors\":\"R. MajidiAhy, S. Bandy, L. Ching, M. Glenn, C. Nishimoto, S. Silverman, S. Weng, G. Zdasiuk, Z. Tan, M. Riaziat\",\"doi\":\"10.1109/ICIPRM.1990.202993\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<<ETX>>\",\"PeriodicalId\":138960,\"journal\":{\"name\":\"International Conference on Indium Phosphide and Related Materials\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1990-04-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1990.202993\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1990.202993","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new type of field-effect transistor designed for strong transconductance nonlinearities, which can be optimized for a specific nonlinear circuit function, is reported. The device concept and its first-order theory are demonstrated by design and fabrication of an InP-based NOTFET and by simulated and experimental results for microwave harmonic generation. These measurements also demonstrate NOTFET potential for efficient nonlinear circuit applications particularly attractive at millimeter-wave frequencies.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
