采用模板自组装技术制造的低电压、可扩展纳米晶快闪存储器

IEEE International Electron Devices Meeting 2003 Pub Date : 2003-12-08 DOI:10.1109/IEDM.2003.1269340

K. Guarini, C. T. Black, Y. Zhang, I. Babich, E. Sikorski, L. Gignac

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引用次数: 43

摘要

介绍了一种构建纳米晶快闪器件的新方法，实现了对纳米晶尺寸和位置的精确控制。纳米晶体的尺寸是通过聚合物自组装来定义的，便于器件缩放。器件表现出低电压存储操作，具有良好的保留和持久性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Low voltage, scalable nanocrystal flash memory fabricated by templated self assembly

We introduce a new method for building nanocrystal flash memory devices that achieves precise control of nanocrystal size and position. Nanocrystal dimensions are defined via polymer self assembly, facilitating device scaling. Devices exhibit low voltage memory operation with promising retention and endurance properties.

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IEEE International Electron Devices Meeting 2003

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