重离子辐射对4kb相变存储器的影响

2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2020-10-01 DOI:10.1109/RADECS50773.2020.9857688

A. Serra, T. Vogel, G. Lefévre, S. Petzold, N. Kaiser, G. Bourgeois, M. Cyrille, L. Alff, C. Trautmann, C. Vallée, D. Sylvain, C. Charpin-Nicolle, Gemma Navarro, E. Nowak

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引用次数: 1

摘要

在这项工作中，我们分析了由于材料和4kb存储器阵列的表征，在高影响下重离子辐射对$\mathbf{Ge}_{\mathbf{2}}\mathbf{Sb}_{\mathbf{2}}\mathbf{Te}_{\mathbf{5}，}$和富锗GeSbTe相变存储器(PCM)的不同影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Heavy Ions Radiation Effects on 4kb Phase-Change Memory

In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on $\mathbf{Ge}_{\mathbf{2}}\mathbf{Sb}_{\mathbf{2}}\mathbf{Te}_{\mathbf{5},}$ and Ge-rich GeSbTe based Phase-Change Memory (PCM).

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2020 20th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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