{"title":"InP阻流层中掺杂物分布的纳米尺度映射","authors":"R. Hull, M. Moore, J. Walker","doi":"10.1109/SIM.1996.570923","DOIUrl":null,"url":null,"abstract":"A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.","PeriodicalId":391894,"journal":{"name":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nanoscale mapping of dopant distributions in InP current blocking layers\",\"authors\":\"R. Hull, M. Moore, J. Walker\",\"doi\":\"10.1109/SIM.1996.570923\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.\",\"PeriodicalId\":391894,\"journal\":{\"name\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of Semiconducting and Semi-Insulating Materials Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SIM.1996.570923\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Semiconducting and Semi-Insulating Materials Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SIM.1996.570923","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Nanoscale mapping of dopant distributions in InP current blocking layers
A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution /spl sim/10 nm and compositional sensitivity /spl sim/10/sup 17/ cm/sup -3/. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed.
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