一种185 μW−105.1 dB THD 88.6 dB SNDR负r稳定音频前置放大器

Seungwoo Song, Changuk Lee, Moonhyung Jang, Youngcheol Chae
{"title":"一种185 μW−105.1 dB THD 88.6 dB SNDR负r稳定音频前置放大器","authors":"Seungwoo Song, Changuk Lee, Moonhyung Jang, Youngcheol Chae","doi":"10.1109/ESSCIRC.2019.8902846","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power preamplifier for high fidelity audio codecs. It attains high linearity at low power by using a negative-R stabilized amplifier architecture that employs a negative-R assisted amplifier in a low-frequency path to cancel the non-idealities of a main amplifier. This shows the in-band noise attenuation of amplifiers and the drastic improvement of the linearity. Fabricated in a 65-nm CMOS process, the preamplifier achieves −105.1 dB THD, 88.6 dB SNDR, and 89.3 dB DR with 20 dB gain in 20 kHz bandwidth, while consuming only 185 μW from a 1.2 V supply. This results in the highest energy-efficiency FoMSNDR of 168.9 dB among audio preamplifiers.","PeriodicalId":402948,"journal":{"name":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"A 185 μW −105.1 dB THD 88.6 dB SNDR Negative-R Stabilized Audio Preamplifier\",\"authors\":\"Seungwoo Song, Changuk Lee, Moonhyung Jang, Youngcheol Chae\",\"doi\":\"10.1109/ESSCIRC.2019.8902846\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a low-power preamplifier for high fidelity audio codecs. It attains high linearity at low power by using a negative-R stabilized amplifier architecture that employs a negative-R assisted amplifier in a low-frequency path to cancel the non-idealities of a main amplifier. This shows the in-band noise attenuation of amplifiers and the drastic improvement of the linearity. Fabricated in a 65-nm CMOS process, the preamplifier achieves −105.1 dB THD, 88.6 dB SNDR, and 89.3 dB DR with 20 dB gain in 20 kHz bandwidth, while consuming only 185 μW from a 1.2 V supply. This results in the highest energy-efficiency FoMSNDR of 168.9 dB among audio preamplifiers.\",\"PeriodicalId\":402948,\"journal\":{\"name\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"volume\":\"129 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESSCIRC.2019.8902846\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESSCIRC.2019.8902846","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

提出了一种用于高保真音频编解码器的低功耗前置放大器。它采用负r稳定放大器架构,在低频路径上采用负r辅助放大器,以消除主放大器的非理想性,从而在低功率下实现高线性度。这显示了放大器的带内噪声衰减和线性度的急剧改善。该前置放大器采用65纳米CMOS工艺,在20 kHz带宽下实现- 105.1 dB THD、88.6 dB SNDR和89.3 dB DR,增益为20 dB,功耗仅为185 μW。这导致了在音频前置放大器中168.9 dB的最高能量效率的FoMSNDR。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A 185 μW −105.1 dB THD 88.6 dB SNDR Negative-R Stabilized Audio Preamplifier
This paper presents a low-power preamplifier for high fidelity audio codecs. It attains high linearity at low power by using a negative-R stabilized amplifier architecture that employs a negative-R assisted amplifier in a low-frequency path to cancel the non-idealities of a main amplifier. This shows the in-band noise attenuation of amplifiers and the drastic improvement of the linearity. Fabricated in a 65-nm CMOS process, the preamplifier achieves −105.1 dB THD, 88.6 dB SNDR, and 89.3 dB DR with 20 dB gain in 20 kHz bandwidth, while consuming only 185 μW from a 1.2 V supply. This results in the highest energy-efficiency FoMSNDR of 168.9 dB among audio preamplifiers.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 78 fs RMS Jitter Injection-Locked Clock Multiplier Using Transformer-Based Ultra-Low-Power VCO An Integrated Programmable High-Voltage Bipolar Pulser With Embedded Transmit/Receive Switch for Miniature Ultrasound Probes Machine Learning Based Prior-Knowledge-Free Calibration for Split Pipelined-SAR ADCs with Open-Loop Amplifiers Achieving 93.7-dB SFDR An 18 dBm 155-180 GHz SiGe Power Amplifier Using a 4-Way T-Junction Combining Network A Bidirectional Brain Computer Interface with 64-Channel Recording, Resonant Stimulation and Artifact Suppression in Standard 65nm CMOS
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1