B. Lin, Yuto Imae, Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Ma, S. Kuboya, Hideto Miyake, Y. Ishitani
{"title":"半导体-金属微光栅结构中红外区域的热辐射强度","authors":"B. Lin, Yuto Imae, Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Ma, S. Kuboya, Hideto Miyake, Y. Ishitani","doi":"10.1109/csw55288.2022.9930468","DOIUrl":null,"url":null,"abstract":"Thermal emissions from metal/dielectric-material stripe structures on the surface of dielectric materials are observed. These emissions are attributed to electric-dipole emissions induced by coherent thermal lattice vibrations in the surface structures of a few micrometers. The structures on undoped GaAs and GaP show the emission close to the longitudinal optical (LO) phonon energy, while the peak energy of emission from the structures on ZnO and GaN is located in between the LO and transverse optical (TO) mode energies. The emission intensities from GaN and ZnO are stronger than that of GaAs.","PeriodicalId":382443,"journal":{"name":"2022 Compound Semiconductor Week (CSW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Thermal radiation intensities in mid-infrared region from semiconductor-metal micro-grating structure\",\"authors\":\"B. Lin, Yuto Imae, Hnin Lai Lai Aye, K. Hayashi, Haruki Orito, B. Ma, S. Kuboya, Hideto Miyake, Y. Ishitani\",\"doi\":\"10.1109/csw55288.2022.9930468\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermal emissions from metal/dielectric-material stripe structures on the surface of dielectric materials are observed. These emissions are attributed to electric-dipole emissions induced by coherent thermal lattice vibrations in the surface structures of a few micrometers. The structures on undoped GaAs and GaP show the emission close to the longitudinal optical (LO) phonon energy, while the peak energy of emission from the structures on ZnO and GaN is located in between the LO and transverse optical (TO) mode energies. The emission intensities from GaN and ZnO are stronger than that of GaAs.\",\"PeriodicalId\":382443,\"journal\":{\"name\":\"2022 Compound Semiconductor Week (CSW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2022 Compound Semiconductor Week (CSW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/csw55288.2022.9930468\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 Compound Semiconductor Week (CSW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/csw55288.2022.9930468","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermal radiation intensities in mid-infrared region from semiconductor-metal micro-grating structure
Thermal emissions from metal/dielectric-material stripe structures on the surface of dielectric materials are observed. These emissions are attributed to electric-dipole emissions induced by coherent thermal lattice vibrations in the surface structures of a few micrometers. The structures on undoped GaAs and GaP show the emission close to the longitudinal optical (LO) phonon energy, while the peak energy of emission from the structures on ZnO and GaN is located in between the LO and transverse optical (TO) mode energies. The emission intensities from GaN and ZnO are stronger than that of GaAs.